A physics-oriented memristor model with the coexistence of NDR effect and RS memory behavior for bio-inspired computing
نویسندگان
چکیده
Bio-inspired computing promises fundamentally different ways to advances in artificial intelligence with extreme energy efficiency. Memristive technologies due the non-volatility, high density, low-power, and synaptic bionic properties can help realizing bio-inspired architecture its hardware implementation. This paper proposes a novel physics-oriented memristor model coexistence of negative differential resistance (NDR) effect resistive switching (RS) memory behavior for computing. Firstly, an Ag/TiOx/FTO is fabricated using sol-gel magnetron sputtering method, performance test demonstrates that NDR RS be modulated by moisture. Then, physical-oriented constructed, which provides possibility explore dynamics simulation. Furthermore, memristor-based affective circuit emulating process human associative learning designed. The experiment change time without additional cost, expected realize automatic conversion from short-term long-term
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ژورنال
عنوان ژورنال: Materials today advances
سال: 2022
ISSN: ['2590-0498']
DOI: https://doi.org/10.1016/j.mtadv.2022.100293